A Kinetic Model for Plasma Etching Silicon in a sf6 gas/O2 RF

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[PDF] Cryogenic etching of silicon with Sulfr hexafluoride/O2/SiF4 plasmas

Cyrogenic etching of silicon is envisaged to enable better control over plasma processing in microelectronics and to limit plasma induced damage for features beyond the 14 nm technology node. We here present results of plasma modelling for a insulating gas/O2/SiF4 plasma and of molecular dynamics (MD) simulations for predicting surface interactions, together with results of etch experiments for validation.Get price

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Survey of China’s gaz sf6 Producers | Fluorinated Gas Partnership

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Implementation Of Treatment Recovery Of the Sulfr hexafluoride Gas

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Sulfr hexafluoride reduction, Alternatives and Process improvement in the

2 Comparison of Sulfr hexafluoride gas exhaust by Die caster 1. Japan; [33 companies in 2004, Data by JMA] Year 2001 2002 2003 2004 2005 Sulfr hexafluoride kg/ ton-Mg melting 3.3 2.7 2.3 1.9 2.0Get price

Formation of Nanoscale Structures by Inductively Coupled

@article{osti_1116140, title = {Formation of Nanoscale Structures by Inductively Coupled Plasma Etching.}, author = {Henry, Michael David and Welch, Colin and Olynick, Deirdre and Liu, Zuwei and Holmberg, Anders and Peroz, Christopher and Robinson, Alex and Scherer, Axel and Mollenhauer, Thomas and Genova, Vince}, abstractNote = {Abstract not provided.}, doi = {}, url = { www.osti.govGet price